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| inchange semiconductor isc product specification isc silicon npn darlingtion power transistor PMD12K100 description high dc current gain collector-emitter breakdown voltage- v (br)ceo = 100v(min) complement to type pmd13k100 applications designed for general purpose amplifier and dc motor control applications. absolute maximum ratings(t c =25 ) symbol parameter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 5.0 v i c collector current -continuous 8 a i cp collector current-peak 16 a i b b base current 0.12 a p c collector power dissipation@t c =50 100 w t j junction temperature 150 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermalresistance, junction to case 1.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlingtion power transistor PMD12K100 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)ceo collector-emitter breakdown voltage i c = 100ma; i b = 0 100 v v cer(sus) collector-emitter sustaining voltage i c = 100ma; r be = 2.2k 100 v v ce (sat) collector-emitter saturation voltage i c = 4a; i b = 16ma b 2.0 v v be (sat) base-emitter saturation voltage i c = 4a; i b = 16ma b 2.8 v v be (on) base-emitter on voltage i c = 4a; v ce = 3v 2.8 v i cer collector cutoff current v ce = 67v; r be = 2.2k 5.0 ma i ebo emitter cut-off current v eb = 5v; i c = 0 3.0 ma h fe dc current gain i c = 4a; v ce = 3v 1000 20000 c ob output capacitance i e = 0; v cb = 10v; f test = 1.0mhz 200 pf isc website www.iscsemi.cn 2 |
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